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KSD2012YTU

ON Semiconductor
RoHS
/
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tube Through Hole NPN Single Bipolar (BJT) Transistor 100 @ 500mA 5V 100muA ICBO 25W 3MHz
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Buying Options
Total Price: USD $0.18
Unit Price: USD $0.1848
≥1 USD $0.1848
Inventory: 1130
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Technical

hFE Min 100
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 60V
Collector Emitter Saturation Voltage 400mV
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 2A
Current - Collector Cutoff (Max) 100μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 5V
Max Collector Current 3A
Collector Emitter Voltage (VCEO) 60V
Transistor Type NPN
Gain Bandwidth Product 3MHz
Element Configuration Single
Current Rating 3A
Max Power Dissipation 25W
Voltage - Rated DC 60V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tube
Operating Temperature 150°C TJ

Physical

Number of Pins 3
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole

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