KSD1616GTA
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 200 @ 100mA 2V 100nA ICBO 750mW 160MHz
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 135
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 60V
Collector Emitter Saturation Voltage 150mV
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 50V
Transistor Type NPN
Gain Bandwidth Product 160MHz
Power Dissipation 750mW
Element Configuration Single
Number of Elements 1
Base Part Number KSD1616
Frequency 160MHz
Current Rating 1A
Max Power Dissipation 750mW
Voltage - Rated DC 50V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2016
Packaging Tape & Box (TB)
Operating Temperature 150°C TJ
Physical
Weight 240mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
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