KSD1616GBU
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 200 @ 100mA 2V 100nA ICBO 750mW 160MHz
PDF
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Buying Options
Total Price: USD $0.04
Unit Price: USD $0.044
≥1 USD $0.044
Inventory: 13589
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 179mg
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 50V
Max Power Dissipation 750mW
Current Rating 1A
Frequency 160MHz
Base Part Number KSD1616
Number of Elements 1
Element Configuration Single
Power Dissipation 750mW
Gain Bandwidth Product 160MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 150mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 135
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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