KSD1616AYTA
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT NPN Epitaxial Transistor
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Buying Options
Total Price: USD $0.36
Unit Price: USD $0.3608
≥1 USD $0.3608
≥10 USD $0.2816
≥100 USD $0.16896
≥500 USD $0.156429
≥1000 USD $0.106374
Inventory: 1400
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 750mW
Terminal Position BOTTOM
Current Rating 1A
Frequency 160MHz
Base Part Number KSD1616
Number of Elements 1
Element Configuration Single
Power Dissipation 750mW
Transistor Application SWITCHING
Gain Bandwidth Product 160MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 135 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 160MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 6V
hFE Min 135
Dimensions
Height 5.33mm
Length 5.2mm
Width 4.19mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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