KSD1616ALTA
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT NPN Epitaxial Transistor
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Total Price: USD $0.05
Unit Price: USD $0.0528
≥1 USD $0.0528
Inventory: 18058
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 4.19mm
Length 5.2mm
Height 5.33mm
Technical
hFE Min 135
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 120V
Max Breakdown Voltage 60V
Collector Emitter Saturation Voltage 300mV
Transition Frequency 160MHz
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100mA 2V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 60V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 160MHz
Transistor Application SWITCHING
Power Dissipation 750mW
Element Configuration Single
Number of Elements 1
Base Part Number KSD1616
Frequency 160MHz
Current Rating 1A
Terminal Position BOTTOM
Max Power Dissipation 750mW
Voltage - Rated DC 60V
Subcategory Other Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2004
Packaging Tape & Box (TB)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Weight 240mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Factory Lead Time 6 Weeks
Alternative Model
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