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KSD1408OTU

ON Semiconductor
RoHS
/
Package TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tube Through Hole NPN Single Bipolar (BJT) Transistor 70 @ 500mA 5V 30muA ICBO 25W 8MHz
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Weight 2.27g

Technical

Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 80V
Max Power Dissipation 25W
Current Rating 4A
Frequency 8MHz
Number of Elements 1
Element Configuration Single
Power Dissipation 25W
Gain Bandwidth Product 8MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 500mA 5V
Current - Collector Cutoff (Max) 30μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 300mA, 3A
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 450mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 40

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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