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KSC900GTA

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 200 @ 500muA 3V 50mA 250mW 100MHz
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Buying Options
Total Price: USD $0.03
Unit Price: USD $0.0264
≥1 USD $0.0264
Inventory: 1248
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Technical

hFE Min 120
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 30V
Frequency - Transition 100MHz
Collector Emitter Saturation Voltage 100mV
Current - Collector (Ic) (Max) 50mA
Voltage - Collector Emitter Breakdown (Max) 25V
Collector Emitter Breakdown Voltage 25V
Vce Saturation (Max) @ Ib, Ic 200mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 50nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500μA 3V
Max Collector Current 50mA
Collector Emitter Voltage (VCEO) 25V
Transistor Type NPN
Gain Bandwidth Product 100MHz
Power - Max 250mW
Power Dissipation 250mW
Element Configuration Single
Polarity NPN
Number of Elements 1
Base Part Number KSC900
Frequency 100MHz
Current Rating 50mA
Max Power Dissipation 250mW
Voltage - Rated DC 25V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2002
Packaging Tape & Box (TB)
Operating Temperature 150°C TJ

Physical

Supplier Device Package TO-92-3
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole

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