KSC839YBU
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 120 @ 2mA 12V 100nA ICBO 250mW 250MHz
PDF
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Buying Options
Total Price: USD $0.03
Unit Price: USD $0.0264
≥1 USD $0.0264
Inventory: 10017
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 40
Emitter Base Voltage (VEBO) 4V
Collector Base Voltage (VCBO) 35V
Frequency - Transition 200MHz
Collector Emitter Breakdown Voltage 30V
Vce Saturation (Max) @ Ib, Ic 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 12V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 30V
Transistor Type NPN
Gain Bandwidth Product 250MHz
Power Dissipation 250mW
Element Configuration Single
Number of Elements 1
Frequency 250MHz
Current Rating 100mA
Max Power Dissipation 250mW
Voltage - Rated DC 30V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
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