KSC5030FRTU
RoHS
/
Package TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole NPN Single Bipolar (BJT) Transistor 10 @ 600mA 5V 10muA ICBO 60W 1.1kV
PDF
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Buying Options
Total Price: USD $20.14
Unit Price: USD $20.13525
≥1 USD $20.13525
≥10 USD $16.52145
≥100 USD $16.00465
≥500 USD $15.4888
≥1000 USD $14.972
Inventory: 5910
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
hFE Min 10
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 1.1kV
Collector Emitter Breakdown Voltage 800V
Vce Saturation (Max) @ Ib, Ic 2V @ 600mA, 3A
Current - Collector Cutoff (Max) 10μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 600mA 5V
Max Collector Current 6A
Collector Emitter Voltage (VCEO) 800V
Transistor Type NPN
Power Dissipation 60W
Element Configuration Single
Number of Elements 1
Max Power Dissipation 60W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tube
Physical
Package / Case TO-3P-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
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