KSC2330OTA
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 Long Body (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT NPN Epitaxial Transistor
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Total Price: USD $0.07
Unit Price: USD $0.0704
≥1 USD $0.0704
Inventory: 88644
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
hFE Min 40
Emitter Base Voltage (VEBO) 7V
Collector Base Voltage (VCBO) 300V
Max Breakdown Voltage 300V
Collector Emitter Saturation Voltage 500mV
Transition Frequency 50MHz
Collector Emitter Breakdown Voltage 300V
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 20mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 300V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 50MHz
Transistor Application AMPLIFIER
Power Dissipation 1W
Element Configuration Single
Number of Elements 1
Base Part Number KSC2330
Frequency 50MHz
Current Rating 100mA
Terminal Position BOTTOM
Max Power Dissipation 1W
Voltage - Rated DC 300V
Subcategory Other Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2017
Packaging Tape & Box (TB)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Weight 371.1027mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Factory Lead Time 6 Weeks
Alternative Model
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