KSC2330ABU
RoHS
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Package TO-226-3, TO-92-3 Long Body
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN KSC2330 Bipolar (BJT) Transistor 40 @ 20mA 10V 100mA 1W 50MHz
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92-3
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC2330
Power - Max 1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 50MHz
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