KSC2316OTA
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Package TO-226-3, TO-92-3 Long Body (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tape & Box (TB) Through Hole NPN KSC2316 Bipolar (BJT) Transistor 80 @ 100mA 5V 800mA 900mW 120MHz
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package TO-92-3
Technical
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC2316
Power - Max 900mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 120V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 120MHz
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