KSC2310YBU
RoHS
/
Package TO-226-3, TO-92-3 Long Body
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 120 @ 10mA 5V 50mA 800mW 100MHz
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Buying Options
Total Price: USD $0.05
Unit Price: USD $0.0528
≥1 USD $0.0528
Inventory: 117129
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 40
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 200V
Frequency - Transition 100MHz
Collector Emitter Saturation Voltage 500mV
Current - Collector (Ic) (Max) 50mA
Voltage - Collector Emitter Breakdown (Max) 150V
Collector Emitter Breakdown Voltage 150V
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA 5V
Max Collector Current 50mA
Collector Emitter Voltage (VCEO) 150V
Transistor Type NPN
Gain Bandwidth Product 100MHz
Power - Max 800mW
Power Dissipation 800mW
Element Configuration Single
Polarity NPN
Number of Elements 1
Base Part Number KSC2310
Frequency 100MHz
Current Rating 50mA
Max Power Dissipation 800mW
Voltage - Rated DC 150V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Weight 185mg
Supplier Device Package TO-92-3
Number of Pins 3
Package / Case TO-226-3, TO-92-3 Long Body
Mounting Type Through Hole
Mount Through Hole
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