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KSC1815GRTA

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 200 @ 2mA 6V 100nA ICBO 400mW 80MHz
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Buying Options
Total Price: USD $0.53
Unit Price: USD $0.52809
≥1 USD $0.52809
≥10 USD $0.4982
≥100 USD $0.47
≥500 USD $0.4434
≥1000 USD $0.4183
Inventory: 15000
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant

Technical

hFE Min 70
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 60V
Collector Emitter Saturation Voltage 100mV
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 6V
Max Collector Current 150mA
Collector Emitter Voltage (VCEO) 50V
Transistor Type NPN
Gain Bandwidth Product 80MHz
Power Dissipation 400mW
Element Configuration Single
Number of Elements 1
Base Part Number KSC1815
Frequency 80MHz
Current Rating 150mA
Max Power Dissipation 400mW
Voltage - Rated DC 50V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tape & Box (TB)
Operating Temperature 150°C TJ

Physical

Weight 178.2mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole

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