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KSC1675YTA

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tape & Box (TB) Through Hole NPN KSC1675 Bipolar (BJT) Transistor 120 @ 1mA 6V 50mA 250mW 300MHz
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Technical Details

Physical

Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3

Technical

Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSC1675
Power - Max 250mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 50mA
Frequency - Transition 300MHz

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