KSC1008CYBU
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 120 @ 50mA 2V 100nA ICBO 800mW 50MHz
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 40
Emitter Base Voltage (VEBO) 8V
Collector Base Voltage (VCBO) 80V
Collector Emitter Saturation Voltage 200mV
Collector Emitter Breakdown Voltage 60V
Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA 2V
Max Collector Current 700mA
Collector Emitter Voltage (VCEO) 60V
Transistor Type NPN
Gain Bandwidth Product 50MHz
Power Dissipation 800mW
Element Configuration Single
Number of Elements 1
Base Part Number KSC1008
Frequency 50MHz
Current Rating 700mA
Max Power Dissipation 800mW
Voltage - Rated DC 60V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Weight 179mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
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