KSB811YTA
RoHS
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Package TO-226-3, TO-92-3 Short Body
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tape & Box (TB) Through Hole PNP Single Bipolar (BJT) Transistor 120 @ 100mA 1V 100nA ICBO 350mW 110MHz
PDF
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Buying Options
Total Price: USD $0.17
Unit Price: USD $0.170408
≥1 USD $0.170408
≥10 USD $0.160763
≥100 USD $0.151661
≥500 USD $0.143078
≥1000 USD $0.134979
Inventory: 1192
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Short Body
Number of Pins 3
Technical
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -25V
Max Power Dissipation 350mW
Current Rating -1A
Frequency 110MHz
Base Part Number KSB811
Number of Elements 1
Element Configuration Single
Power Dissipation 350mW
Gain Bandwidth Product 110MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 25V
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -5V
hFE Min 70
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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