KSB564AYBU
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 120 @ 100mA 1V 1A 800mW 110MHz
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Buying Options
Total Price: USD $0.61
Unit Price: USD $0.6099
≥1 USD $0.6099
≥10 USD $0.50065
≥100 USD $0.48545
≥500 USD $0.4693
≥1000 USD $0.4541
Inventory: 12502
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -25V
Max Power Dissipation 800mW
Current Rating -1A
Base Part Number KSB564
Polarity PNP
Element Configuration Single
Power - Max 800mW
Gain Bandwidth Product 110MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 25V
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 1A
Collector Emitter Saturation Voltage -500mV
Frequency - Transition 110MHz
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -5V
hFE Min 70
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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