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KSB564ACYTA

ON Semiconductor
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Tape & Box (TB) Through Hole PNP KSB564 Bipolar (BJT) Transistor 120 @ 100mA 1V 1A 800mW 110MHz
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Buying Options
Total Price: USD $0.03
Unit Price: USD $0.0264
≥1 USD $0.0264
Inventory: 1624109
Minimum: 1
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Technical Details

Technical

Frequency - Transition 110MHz
Current - Collector (Ic) (Max) 1A
Voltage - Collector Emitter Breakdown (Max) 25V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 1V
Transistor Type PNP
Power - Max 800mW
Base Part Number KSB564
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2014
Packaging Tape & Box (TB)
Operating Temperature 150°C TJ

Physical

Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole

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