KSB564ACGTA
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tape & Box (TB) Through Hole PNP Single Bipolar (BJT) Transistor 200 @ 100mA 1V 1A 800mW 110MHz
PDF
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Buying Options
Total Price: USD $0.96
Unit Price: USD $0.960033
≥1 USD $0.960033
≥10 USD $0.905691
≥100 USD $0.854424
≥500 USD $0.80606
≥1000 USD $0.760438
Inventory: 1167
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 70
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -30V
Frequency - Transition 110MHz
Collector Emitter Saturation Voltage -500mV
Current - Collector (Ic) (Max) 1A
Voltage - Collector Emitter Breakdown (Max) 25V
Collector Emitter Breakdown Voltage 25V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 1V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 25V
Transistor Type PNP
Gain Bandwidth Product 110MHz
Power - Max 800mW
Power Dissipation 800mW
Element Configuration Single
Polarity PNP
Number of Elements 1
Base Part Number KSB564
Frequency 110MHz
Current Rating -1A
Max Power Dissipation 800mW
Voltage - Rated DC -25V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tape & Box (TB)
Operating Temperature 150°C TJ
Physical
Weight 178.2mg
Supplier Device Package TO-92-3
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
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