KSB1151YS
RoHS 
RoHS compliant
RoHS compliantPackage TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT PNP Epitaxial Sil
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Buying Options
Total Price: USD $0.32
Unit Price: USD $0.3168
≥1 USD $0.3168
Inventory: 1157
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 761mg
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 1.3W
Current Rating -5A
Base Part Number KSB1151
Number of Elements 1
Element Configuration Single
Power Dissipation 1.3W
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 1V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage -140mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -7V
hFE Min 100
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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