KSB1116YBU
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 135 @ 100mA 2V 100nA ICBO 750mW 120MHz
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 135
Emitter Base Voltage (VEBO) -6V
Collector Base Voltage (VCBO) -60V
Collector Emitter Saturation Voltage -200mV
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 135 @ 100mA 2V
Max Collector Current 1A
Collector Emitter Voltage (VCEO) 300mV
Transistor Type PNP
Gain Bandwidth Product 120MHz
Power Dissipation 750mW
Element Configuration Single
Number of Elements 1
Base Part Number KSB1116
Frequency 120MHz
Current Rating -1A
Max Power Dissipation 750mW
Voltage - Rated DC -50V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Weight 178.2mg
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
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