KSB1116GTA
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tape & Box (TB) Through Hole PNP Single Bipolar (BJT) Transistor 200 @ 100mA 2V 100nA ICBO 750mW 120MHz
PDF
/
Buying Options
Total Price: USD $9.76
Unit Price: USD $9.76315
≥1 USD $9.76315
≥10 USD $8.0104
≥100 USD $7.76055
≥500 USD $7.50975
≥1000 USD $7.2599
Inventory: 1089
Minimum: 1
-
+
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Technical
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -50V
Max Power Dissipation 750mW
Current Rating -1A
Frequency 120MHz
Base Part Number KSB1116
Number of Elements 1
Element Configuration Single
Power Dissipation 750mW
Gain Bandwidth Product 120MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage -200mV
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -6V
hFE Min 135
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Recommended For You
KSB1116GTA+price,KSB1116GTA+datasheet,KSB1116GTA+in stock,buy+KSB1116GTA,finder+KSB1116GTA,KSB1116GTA+tutorials,KSB1116GTA+download