KSB1116GBU
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS PNP 50V 1A TO-92
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -50V
Max Power Dissipation 750mW
Current Rating -1A
Frequency 120MHz
Base Part Number KSB1116
Number of Elements 1
Element Configuration Single
Power Dissipation 750mW
Gain Bandwidth Product 120MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage -200mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) -6V
hFE Min 135
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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