KSB1116AYTA
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tape & Box (TB) Through Hole PNP KSB1116 Bipolar (BJT) Transistor 135 @ 100mA 2V 1A 750mW 120MHz
PDF
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Buying Options
Total Price: USD $0.04
Unit Price: USD $0.044
≥1 USD $0.044
Inventory: 234030
Minimum: 1
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Technical
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSB1116
Power - Max 750mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 135 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 120MHz
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