KSA709YBU
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP SINGLE Bipolar (BJT) Transistor 120 @ 50mA 2V 700mA 800mW 50MHz
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Frequency - Transition 50MHz
Transition Frequency 50MHz
Current - Collector (Ic) (Max) 700mA
Voltage - Collector Emitter Breakdown (Max) 150V
Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA 2V
Transistor Type PNP
Polarity/Channel Type PNP
Transistor Application AMPLIFIER
Power - Max 800mW
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-PBCY-T3
Base Part Number KSA709
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) NOT APPLICABLE
Terminal Position BOTTOM
HTS Code 8541.21.00.95
Terminal Finish MATTE TIN
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
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