KSA708CYTA
RoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT PNP Epitaxial Transistor
PDF
/
Buying Options
Total Price: USD $0.4
Unit Price: USD $0.4048
≥1 USD $0.4048
≥10 USD $0.2816
≥100 USD $0.142208
≥500 USD $0.116002
≥1000 USD $0.086064
Inventory: 1240
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 800mW
Terminal Position BOTTOM
Current Rating -700mA
Frequency 50MHz
Base Part Number KSA708
Number of Elements 1
Element Configuration Single
Power Dissipation 800mW
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 700mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -300mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -8V
hFE Min 40
Dimensions
Height 4.58mm
Length 4.58mm
Width 3.86mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
KSA708CYTA+price,KSA708CYTA+datasheet,KSA708CYTA+in stock,buy+KSA708CYTA,finder+KSA708CYTA,KSA708CYTA+tutorials,KSA708CYTA+download