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KSA539YBU

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bulk Through Hole PNP Single Bipolar (BJT) Transistor 120 @ 50mA 1V 100nA ICBO 400mW 60V
PDF
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Buying Options
Total Price: USD $0.06
Unit Price: USD $0.056241
≥1 USD $0.056241
≥10 USD $0.053063
≥100 USD $0.050058
≥500 USD $0.047227
≥1000 USD $0.044552
Inventory: 1158
Minimum: 1
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -45V
Max Power Dissipation 400mW
Current Rating -200mA
Base Part Number KSA539
Number of Elements 1
Element Configuration Single
Power Dissipation 400mW
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 15mA, 150mA
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage -250mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) -5V
hFE Min 40

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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