KSA1406CSTU
RoHS
/
Package TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole PNP Single Bipolar (BJT) Transistor 40 @ 10mA 10V 100nA ICBO 1.2W 400MHz
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 40
Emitter Base Voltage (VEBO) -4V
Collector Base Voltage (VCBO) -200V
Collector Emitter Breakdown Voltage 200V
Vce Saturation (Max) @ Ib, Ic 800mV @ 3mA, 30mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 10V
Max Collector Current 100mA
Collector Emitter Voltage (VCEO) 800mV
Transistor Type PNP
Gain Bandwidth Product 400MHz
Power Dissipation 1.2W
Element Configuration Single
Number of Elements 1
Frequency 400MHz
Current Rating -100mA
Max Power Dissipation 1.2W
Voltage - Rated DC -200V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tube
Operating Temperature 150°C TJ
Physical
Package / Case TO-225AA, TO-126-3
Mounting Type Through Hole
Mount Through Hole
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