KSA1182YMTF
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT PNP Epitaxial Sil
PDF
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Buying Options
Total Price: USD $0.03
Unit Price: USD $0.0264
≥1 USD $0.0264
Inventory: 433676
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
hFE Min 70
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -35V
Max Breakdown Voltage 30V
Collector Emitter Saturation Voltage -100mV
Transition Frequency 200MHz
Collector Emitter Breakdown Voltage 30V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 1V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 30V
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 200MHz
Transistor Application AMPLIFIER
Power Dissipation 150mW
Element Configuration Single
Number of Elements 1
Base Part Number KSA1182
Frequency 200MHz
Current Rating -500mA
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 150mW
Voltage - Rated DC -30V
Subcategory Other Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2008
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Weight 30mg
Number of Pins 3
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 22 hours ago)
Factory Lead Time 6 Weeks
Alternative Model
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