KSA1015OBU
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole PNP Single Bipolar (BJT) Transistor 70 @ 2mA 6V 100nA ICBO 400mW 80MHz
PDF
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Buying Options
Total Price: USD $0.09
Unit Price: USD $0.088
≥1 USD $0.088
Inventory: 1229
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
hFE Min 70
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) 50V
Collector Emitter Breakdown Voltage 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA 6V
Max Collector Current 150mA
Collector Emitter Voltage (VCEO) 50V
Transistor Type PNP
Gain Bandwidth Product 80MHz
Power Dissipation 400mW
Element Configuration Single
Number of Elements 1
Base Part Number KSA1015
Frequency 80MHz
Current Rating -150mA
Max Power Dissipation 400mW
Voltage - Rated DC -50V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tube
Operating Temperature 150°C TJ
Physical
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting Type Through Hole
Mount Through Hole
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