FSB649
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT NPN Transistor Low Saturation
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Buying Options
Total Price: USD $0.35
Unit Price: USD $0.352
≥1 USD $0.352
≥10 USD $0.30272
≥100 USD $0.21032
≥500 USD $0.16419
≥1000 USD $0.133452
Inventory: 1108
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
hFE Min 100
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 35V
Frequency - Transition 150MHz
Max Breakdown Voltage 25V
Collector Emitter Saturation Voltage 600mV
Transition Frequency 150MHz
Collector Emitter Breakdown Voltage 25V
Vce Saturation (Max) @ Ib, Ic 600mV @ 300mA, 3A
Current - Collector Cutoff (Max) 100nA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 2V
Max Collector Current 3A
Collector Emitter Voltage (VCEO) 25V
Transistor Type NPN
Polarity/Channel Type NPN
Power Dissipation 500mW
Element Configuration Single
Number of Elements 1
Base Part Number FSB649
Current Rating 3A
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 500mW
Voltage - Rated DC 25V
Subcategory Other Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2008
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 30mg
Number of Pins 3
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 20 Weeks
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