FJP5554
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 20 @ 800mA 3V 250muA 70W 1.05kV
PDF
/
Buying Options
Total Price: USD $3.32
Unit Price: USD $3.3174
≥1 USD $3.3174
≥10 USD $2.7227
≥100 USD $2.6372
≥500 USD $2.55265
≥1000 USD $2.46715
Inventory: 994
Minimum: 1
-
+
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 1.8g
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Bulk
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 70W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 70W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 800mA 3V
Current - Collector Cutoff (Max) 250μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 3.5A
Collector Emitter Breakdown Voltage 400V
Collector Base Voltage (VCBO) 1.05kV
Emitter Base Voltage (VEBO) 15V
hFE Min 20
Compliance
RoHS Status RoHS Compliant
Recommended For You
FJP5554+price,FJP5554+datasheet,FJP5554+in stock,buy+FJP5554,finder+FJP5554,FJP5554+tutorials,FJP5554+download