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FJP5200RTU

ON Semiconductor
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description TRANS NPN 250V 17A TO-220AB
PDF
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Buying Options
Total Price: USD $10.19
Unit Price: USD $10.1916
≥1 USD $10.1916
≥10 USD $8.36285
≥100 USD $8.10065
≥500 USD $7.8394
≥1000 USD $7.57815
Inventory: 1243
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Technical

hFE Min 55
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 250V
Transition Frequency 30MHz
Collector Emitter Breakdown Voltage 250V
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
JEDEC-95 Code TO-220AB
Current - Collector Cutoff (Max) 5μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 55 @ 1A 5V
Max Collector Current 17A
Collector Emitter Voltage (VCEO) 250V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 30MHz
Transistor Application AMPLIFIER
Power - Max 80W
Power Dissipation 100W
Element Configuration Single
Number of Elements 1
Frequency 30MHz
Max Power Dissipation 100W
Subcategory Other Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2005
Packaging Tube
Operating Temperature -50°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 1.8g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Factory Lead Time 6 Weeks

Alternative Model

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