FJP5200OTU
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN 250V 17A TO-220AB
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
hFE Min 55
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 250V
Collector Emitter Breakdown Voltage 250V
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Current - Collector Cutoff (Max) 5μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A 5V
Max Collector Current 17A
Collector Emitter Voltage (VCEO) 3V
Transistor Type NPN
Gain Bandwidth Product 30MHz
Power - Max 80W
Power Dissipation 100W
Element Configuration Single
Number of Elements 1
Frequency 30MHz
Max Power Dissipation 80W
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Packaging Tube
Operating Temperature -50°C~150°C TJ
Physical
Weight 1.8g
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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