FJP3835TU
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole NPN Single Bipolar (BJT) Transistor 120 @ 3A 4V 100muA ICBO 50W 30MHz
PDF
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Buying Options
Total Price: USD $0.63
Unit Price: USD $0.627858
≥1 USD $0.627858
≥10 USD $0.592319
≥100 USD $0.558792
≥500 USD $0.527163
≥1000 USD $0.497324
Inventory: 1145
Minimum: 1
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Technical Details
Technical
Packaging Tube
Operating Temperature 150°C TJ
hFE Min 120
Emitter Base Voltage (VEBO) 8V
Collector Base Voltage (VCBO) 200V
Collector Emitter Breakdown Voltage 120V
Vce Saturation (Max) @ Ib, Ic 500mV @ 300mA, 3A
Current - Collector Cutoff (Max) 100μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 3A 4V
Max Collector Current 8A
Collector Emitter Voltage (VCEO) 500mV
Transistor Type NPN
Gain Bandwidth Product 30MHz
Element Configuration Single
Current Rating 8A
Max Power Dissipation 50W
Voltage - Rated DC 120V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Physical
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
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