Operating Temperature -55°C~125°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Max Power Dissipation 100W
Configuration SINGLE WITH BUILT-IN FET AND DIODE
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 800V
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 400mA 3V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 750mV @ 330mA, 1A
Collector Emitter Breakdown Voltage 800V
Gate to Source Voltage (Vgs) 20V
Transition Frequency 25MHz
Frequency - Transition 5MHz
Collector Base Voltage (VCBO) 1.6kV
Emitter Base Voltage (VEBO) 12V