D45C12G
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole PNP Single Bipolar (BJT) Transistor 40 @ 200mA 1V 100nA 30W 40MHz
PDF
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Buying Options
Total Price: USD $10.28
Unit Price: USD $10.278432
≥1 USD $10.278432
≥10 USD $9.696638
≥100 USD $9.14777
≥500 USD $8.62997
≥1000 USD $8.141482
Inventory: 3266
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Dimensions
Width 12.7mm
Length 31.75mm
Height 6.35mm
Technical
hFE Min 40
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 80V
Collector Emitter Saturation Voltage 135mV
Transition Frequency 40MHz
Collector Emitter Breakdown Voltage 80V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 1A
JEDEC-95 Code TO-220AB
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA 1V
Max Collector Current 4A
Collector Emitter Voltage (VCEO) 80V
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 40MHz
Transistor Application SWITCHING
Case Connection COLLECTOR
Power Dissipation 30W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 40
Frequency 40MHz
Current Rating -4A
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 30W
Voltage - Rated DC -80V
Subcategory Other Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2007
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 4.535924g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
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