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RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description Bipolar Transistors - BJT NPN/80V/8A
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Buying Options
Total Price: USD $7.43
Unit Price: USD $7.42995
≥1 USD $7.42995
≥10 USD $6.09615
≥100 USD $5.9052
≥500 USD $5.7152
≥1000 USD $5.52425
Inventory: 1112
Minimum: 1
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Technical Details

Compliance

RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 4.83mm
Length 10.67mm
Height 16.51mm

Technical

hFE Min 60
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 80V
Max Breakdown Voltage 300V
Collector Emitter Saturation Voltage 1V
Transition Frequency 50MHz
Collector Emitter Breakdown Voltage 80V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
JEDEC-95 Code TO-220AB
Current - Collector Cutoff (Max) 10μA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Max Collector Current 10A
Collector Emitter Voltage (VCEO) 80V
Transistor Type NPN
Polarity/Channel Type NPN
Gain Bandwidth Product 50MHz
Transistor Application SWITCHING
Power - Max 60W
Power Dissipation 1.67W
Element Configuration Single
Number of Elements 1
Base Part Number D44H
Frequency 50MHz
Max Power Dissipation 1.67W
Subcategory Other Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Published 2009
Packaging Tube
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Weight 1.8g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Factory Lead Time 5 Weeks

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