BUL642D2G
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole NPN Single Bipolar (BJT) Transistor 16 @ 500mA 1V 3A 75W 13MHz
PDF
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Buying Options
Total Price: USD $1.01
Unit Price: USD $1.010393
≥1 USD $1.010393
≥10 USD $0.953195
≥100 USD $0.899244
≥500 USD $0.848345
≥1000 USD $0.800327
Inventory: 1244
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT-IN EFFICIENT ANTISATURATION NETWORK
Subcategory Other Transistors
Max Power Dissipation 75W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Gain Bandwidth Product 13MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 16 @ 500mA 1V
Current - Collector Cutoff (Max) 200μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.5V @ 200mA, 2A
Collector Emitter Breakdown Voltage 440V
Current - Collector (Ic) (Max) 3A
Transition Frequency 13MHz
Collector Emitter Saturation Voltage 1.5V
Collector Base Voltage (VCBO) 825V
Emitter Base Voltage (VEBO) 11V
hFE Min 16
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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