BUH50G
RoHS
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Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
SWITCHMODE? Tube Through Hole NPN Bipolar (BJT) Transistor 5 @ 2A 5V 100muA 50W 4MHz
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Buying Options
Total Price: USD $5.58
Unit Price: USD $5.58125
≥1 USD $5.58125
≥10 USD $4.579
≥100 USD $4.4365
≥500 USD $4.29305
≥1000 USD $4.1496
Inventory: 1142
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2010
Series SWITCHMODE?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC 500V
Max Power Dissipation 50W
Peak Reflow Temperature (Cel) 260
Current Rating 4A
Frequency 4MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 50W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 2A 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 1A, 3A
Collector Emitter Breakdown Voltage 160V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 500V
Collector Base Voltage (VCBO) 800V
Emitter Base Voltage (VEBO) 9V
hFE Min 7
Dimensions
Height 15.75mm
Length 10.28mm
Width 4.82mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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