BU407
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 1V @ 500mA 5A 7A 60W 10MHz
PDF
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Buying Options
Total Price: USD $0.5
Unit Price: USD $0.495789
≥1 USD $0.495789
≥10 USD $0.410759
≥100 USD $0.36759
≥500 USD $0.325729
≥1000 USD $0.300875
Inventory: 168
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 12
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 330V
Frequency - Transition 10MHz
Collector Emitter Saturation Voltage 1V
Current - Collector (Ic) (Max) 7A
Voltage - Collector Emitter Breakdown (Max) 150V
Collector Emitter Breakdown Voltage 150V
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 5A
Current - Collector Cutoff (Max) 5mA
Max Collector Current 7A
Collector Emitter Voltage (VCEO) 150V
Transistor Type NPN
Gain Bandwidth Product 16MHz
Power - Max 60W
Power Dissipation 60W
Element Configuration Single
Polarity NPN
Number of Elements 1
Frequency 10MHz
Current Rating 7A
Max Power Dissipation 60W
Voltage - Rated DC 150V
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2009
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Weight 1.8g
Supplier Device Package TO-220-3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Contact Plating Tin
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