BF493SG
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 40 @ 10mA 10V 10nA 625mW 50MHz
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
hFE Min 25
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) 350V
Collector Emitter Saturation Voltage -2V
Transition Frequency 50MHz
Collector Emitter Breakdown Voltage 350V
Vce Saturation (Max) @ Ib, Ic 2V @ 2mA, 20mA
Current - Collector Cutoff (Max) 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 10V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 350V
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 50MHz
Transistor Application AMPLIFIER
Power Dissipation 625mW
Element Configuration Single
Number of Elements 1
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 40
Frequency 50MHz
Current Rating -500mA
Peak Reflow Temperature (Cel) 260
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC -350V
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2007
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
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