BF493S
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 40 @ 10mA 10V 10nA 625mW 50MHz
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Buying Options
Total Price: USD $0.37
Unit Price: USD $0.372176
≥1 USD $0.372176
≥10 USD $0.351111
≥100 USD $0.331234
≥500 USD $0.312486
≥1000 USD $0.294802
Inventory: 1085
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
hFE Min 25
Emitter Base Voltage (VEBO) 6V
Collector Base Voltage (VCBO) -350V
Collector Emitter Saturation Voltage -2V
Transition Frequency 50MHz
Collector Emitter Breakdown Voltage 350V
Vce Saturation (Max) @ Ib, Ic 2V @ 2mA, 20mA
Current - Collector Cutoff (Max) 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 10V
Max Collector Current 500mA
Collector Emitter Voltage (VCEO) 2V
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 50MHz
Transistor Application AMPLIFIER
Power Dissipation 625mW
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 30
Frequency 50MHz
Current Rating -500mA
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Terminal Position BOTTOM
Max Power Dissipation 625mW
Voltage - Rated DC -350V
Subcategory Other Transistors
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Published 2006
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Mounting Type Through Hole
Mount Through Hole
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