BDV65B
RoHS
/
Package TO-218-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 1000 @ 5A 4V 10A 125W 100V
PDF
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Buying Options
Total Price: USD $23.24
Unit Price: USD $23.2446
≥1 USD $23.2446
≥10 USD $19.07315
≥100 USD $18.47655
≥500 USD $17.8809
≥1000 USD $17.28525
Inventory: 4807
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
Continuous Collector Current 10A
hFE Min 1000
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 100V
Collector Emitter Breakdown Voltage 100V
Vce Saturation (Max) @ Ib, Ic 2V @ 20mA, 5A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 4V
Max Collector Current 10A
Collector Emitter Voltage (VCEO) 2V
Transistor Type NPN - Darlington
Transistor Application AMPLIFIER
Case Connection COLLECTOR
Power Dissipation 125W
Element Configuration Single
Polarity NPN
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 10A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Max Power Dissipation 125W
Voltage - Rated DC 100V
Subcategory Other Transistors
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Published 2002
Packaging Tube
Operating Temperature -65°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Surface Mount NO
Package / Case TO-218-3
Mounting Type Through Hole
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
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