BD810G
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Trans GP BJT PNP 80V 10A 90000mW 3-Pin(3+Tab) TO-220AB Tube
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Buying Options
Total Price: USD $0.81
Unit Price: USD $0.8056
≥1 USD $0.8056
≥10 USD $0.6612
≥100 USD $0.6403
≥500 USD $0.62035
≥1000 USD $0.59945
Inventory: 453
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 12.7mm
Length 31.75mm
Height 6.35mm
Technical
hFE Min 30
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 80V
Collector Emitter Saturation Voltage 1.1V
Transition Frequency 1.5MHz
Collector Emitter Breakdown Voltage 80V
Vce Saturation (Max) @ Ib, Ic 1.1V @ 300mA, 3A
JEDEC-95 Code TO-220AB
Current - Collector Cutoff (Max) 1mA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 4A 2V
Max Collector Current 10A
Collector Emitter Voltage (VCEO) 80V
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 1.5MHz
Transistor Application AMPLIFIER
Case Connection COLLECTOR
Power Dissipation 90W
Element Configuration Single
Number of Elements 1
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 40
Frequency 1.5MHz
Current Rating 10A
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 90W
Voltage - Rated DC -80V
Subcategory Other Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2001
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 4.535924g
Number of Pins 3
Surface Mount NO
Package / Case TO-220-3
Mounting Type Through Hole
Contact Plating Tin
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 2 Weeks
Alternative Model
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