BD809G
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN 80V 10A TO-220AB
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Buying Options
Total Price: USD $0.5
Unit Price: USD $0.501848
≥1 USD $0.501848
≥10 USD $0.473443
≥100 USD $0.446645
≥500 USD $0.421368
≥1000 USD $0.397511
Inventory: 1199
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 90W
Peak Reflow Temperature (Cel) 260
Current Rating 10A
Frequency 1.5MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 90W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 1.5MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 4A 2V
Current - Collector Cutoff (Max) 1mA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.1V @ 300mA, 3A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 1.5MHz
Collector Emitter Saturation Voltage 1.1V
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
Dimensions
Height 15.75mm
Length 10.28mm
Width 4.82mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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