BD442S
RoHS
/
Package TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
TRANS PNP 80V 4A TO-126
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
hFE Min 15
Emitter Base Voltage (VEBO) -5V
Collector Base Voltage (VCBO) -80V
Collector Emitter Saturation Voltage -800mV
Transition Frequency 3MHz
Collector Emitter Breakdown Voltage 80V
Vce Saturation (Max) @ Ib, Ic 800mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100μA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 500mA 1V
Max Collector Current 4A
Collector Emitter Voltage (VCEO) 80V
Transistor Type PNP
Polarity/Channel Type PNP
Gain Bandwidth Product 3MHz
Transistor Application SWITCHING
Power Dissipation 36W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Base Part Number BD442
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Frequency 3MHz
Current Rating -4A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 36W
Voltage - Rated DC -80V
Subcategory Other Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Weight 761mg
Number of Pins 3
Package / Case TO-225AA, TO-126-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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