BD436TG
RoHS
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Package TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole PNP Single Bipolar (BJT) Transistor 85 @ 500mA 1V 100muA ICBO 36W 3MHz
PDF
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Buying Options
Total Price: USD $2.82
Unit Price: USD $2.817668
≥1 USD $2.817668
≥10 USD $2.658183
≥100 USD $2.507713
≥500 USD $2.365772
≥1000 USD $2.231859
Inventory: 1152
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Physical
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -32V
Max Power Dissipation 36W
Peak Reflow Temperature (Cel) 260
Current Rating -4A
Frequency 3MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BD436
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 36W
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA 1V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage 32V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 32V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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