BD435
RoHS
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Package TO-225AA, TO-126-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN BD435 Bipolar (BJT) Transistor 85 @ 500mA 1V 4A 36W 3MHz
PDF
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Buying Options
Total Price: USD $0.04
Unit Price: USD $0.0418
≥1 USD $0.0418
≥10 USD $0.0342
≥100 USD $0.03325
≥500 USD $0.0323
≥1000 USD $0.03135
≥10000 USD $0.0285
Inventory: 100705
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Technical
Emitter Base Voltage (VEBO) 5V
Collector Base Voltage (VCBO) 32V
Frequency - Transition 3MHz
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 32V
Collector Emitter Breakdown Voltage 32V
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100μA ICBO
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA 1V
Max Collector Current 4A
Collector Emitter Voltage (VCEO) 500mV
Transistor Type NPN
Power - Max 36W
Power Dissipation 36W
Polarity NPN
Number of Elements 1
Base Part Number BD435
Frequency 3MHz
Current Rating 4A
Max Power Dissipation 36W
Voltage - Rated DC 32V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2005
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package TO-225AA
Number of Pins 3
Package / Case TO-225AA, TO-126-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
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